代表性成果与荣誉
以第一/通讯作者在Optical Express、Result in Physics、Optical Communication、Applied Physics A等期刊发表SCI论文10余篇，申请发明专利2项。
[1] Li Ying, Lan Tian* et al., High-Performance Mach-Zehnder Modulator Based on Thin-Film Lithium Niobate with Low Voltage-Length Product. ACS OMEGA, 2023, 8(10): 9644-9651.
[2] Ma Yanhong, Lan Tian* et al., Phase-locking dynamics of a 2D VCSEL hexagonal array with an integrated Talbot cavity. Optics Express, 2022, 30(6): 9890-9903.
[3] Wang Xiaofan, Lan Tian* et al., Dynamics of mutual injection phase-locking of laser diode array with interference effect. Optics Communications, 2022, 522: 128616.
[4] Li Ying, Lan Tian* et al., Re-analysis of single-mode conditions for thin-film lithium niobate rib waveguides. Results in Physics, 2021, 30: 104824.
[5] Li Ying, Lan Tian* et al., Fabrication of ridge optical waveguide in thin film lithium niobate by proton exchange and wet etching. Optical Material, 2021, 120, 111433.
[6] Li Ying, Lan Tian* et al., High-efficiency edge-coupling based on lithium niobate on an insulator wire waveguide. Applied Optics, 2020, 59(22): 6694-6701.
[7] Huang Rui, Lan Tian* et al., Investigation of the Blistering and Exfoliation Mechanism of GaAs Wafers and SiO2/Si3N4/GaAs Wafers by He+ and H+ Implantation. Crystals, 2020, 10: 520.
[8] Li Ying, Lan Tian* et al., Research of selective etching in LiNbO3 using proton-exchanged wet etching technique. Materials Research Express. 2020, 7: 056202.
[9] Tian Lan, Zhou Guangzheng et al., Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode with Sandwiched GaN/InAlN/GaN Lower Quantum Barrier. IEEE Photonics Journal, 2018, 10(6): 1504708.
[10]Tian Lan, Yao Shun et al., Effect of strain modification on crystallinity and luminescence of InGaN/GaN multiple quantum wells grown by MOCVD. Applied Physics A, 2018, 124: 619.
[11]Tian Lan, Zhou Guangzheng et al., Improvement of crystallinity and luminescence of GaN‑based laser diode structure with suppressed curvature variation in active layers. Optical and Quantum Electronics, 2018, 50: 434.
