代表性论文
第一作者发表国际学术期刊和国际会议论文14篇。
代表性SCI论文:
1.Lixing Zhou, Xiaolei Wang, Kai Han, Xueli Ma, Yanrong Wang, Jinjuan Xiang, Hong Yang, Jing Zhang, Chao Zhao, Tianchun Ye, and Wenwu Wang, “Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences”, IEEE Transactions on Electron Devices, Vol 66, No 4, pp. 1669–1674, 2019.
2.Lixing Zhou, Xiaolei Wang, Kai Han, Xueli Ma, Yanrong Wang, Jinjuan Xiang, Hong Yang, Jing Zhang, Chao Zhao, Tianchun Ye, and Wenwu Wang, “Understanding dipole formation at dielectric/dielectric hetero-interface”, Applied Physics Letters, Vol 113, No 18, pp. 181601, 2018.
3.Lixing Zhou, Xiaolei Wang, Xueli Ma, Kai Han, Yanrong Wang, Jinjuan Xiang, Hong Yang, Jing Zhang, Chao Zhao, Tianchun Ye, and Wenwu Wang, “Identification of interfacial defect in a Ge gate stack based on ozone passivation”, Semiconductor Science and Technology, Vol 33, No 11, pp. 115005, 2018.
4.Lixing Zhou, Xiaolei Wang, Xueli Ma, Jinjuan Xiang, Hong Yang, Chao Zhao, Tianchun Ye, and Wenwu Wang, “Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOxgate stacks in bulk Ge pMOSFET with GeOxgrown by ozone oxidation” Journal of Physics D: Applied Physics, Vol 50, No 24, pp. 245102, 2017.
5.Lixing Zhou, Xiaolei Wang, Xueli Ma, Kai Han, Yanrong Wang, Jinjuan Xiang, Hong Yang, Jing Zhang, Chao Zhao, Tianchun Ye, and Wenwu Wang, “Comprehensive investigation of the interfacial charges and dipole in GeOx/Al2O3gate stacks of Ge MOS capacitor by post deposition annealing”, Japanese Journal of Applied Physics, Vol 57, No 10, pp. 101101, 2018.