周新田

职称职务:工学博士,研究生导师

E-mail:zhouxt18@bjut.edu.cn

通讯地址:科学楼1209

基本情况

周新田,男,工学博士,研究生导师。2011年毕业于河北工业大学电子科学与技术专业,获工学学士学位。2014年毕业于北京工业大学微电子专业,获工学硕士学位。2018年毕业于清华大学微电子专业,获工学博士学位。2018年至今,于北京工业大学信息学部从事教学科研工作。

研究方向

1、功率半导体器件设计与制造

2、抗辐照加固功率半导体器件研发

3、宽禁带(SiC、GaN、Ga2O3)功率半导体器件可靠性研究

4、功率半导体器件解析建模

科研项目

1、国家自然科学基金

2、共用信息系统装备预研

代表性研究成果

[1]X. Zhou, H. Pang, Y. Jia*,et al., "Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike,"IEEE Transactions on Electron Devices, vol. 68, no. 8, pp. 4010-4015, Aug. 2021.

[2]X. Zhou, H. Pang, Y. Jia*,et al.,"SiC Double-Trench MOSFETs with Embedded MOS-Channel Diode,"IEEE Transactions on Electron Devices, vol. 67, no. 2, pp. 582-587, Feb. 2020.

[3]X. Zhou, Y. Jia*, D. Hu,et al.,"A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility,"IEEE Transactions on Electron Devices, vol. 66, no. 6, pp. 2551-2556, June 2019.

[4]X. Zhou, Y. Tang, Y. Jia*,et al.,"Single-Event Effects in SiC Double-Trench MOSFETs,"IEEE Transactions on Nuclear Science, vol. 66, no. 11, pp. 2312-2318, Nov. 2019.

[5]X. Zhou, H. Su, R. Yue,et al.,"A Deep Insight Into the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Unclamped Inductive Switching Stresses,"IEEE Transactions on Power Electronics, vol. 33, no. 6, pp. 5251-5261, June 2018.

[6]X. Zhou, R. Yue, J. Zhang,et al.,"4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure,"IEEE Transactions on Electron Devices, vol. 64, no. 11, pp. 4568-4574, Nov. 2017.

[7]X. Zhou*, H. Su, Y. Wang,et al.,"Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests,"IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4346-4351, Nov. 2016.

[8] Y. Li,X. Zhou*, Y. Zhao,et al., "Gate Bias Dependence of VTH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests,"IEEE Transactions on Electron Devices, vol. 69, no. 5, pp. 2521-2527, May 2022.

[9] X. Li, Y. Jia,X. Zhou*,et al.,"Degradation of Radiation-Hardened Vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor During Gamma Ray Irradiation Performed After Heavy Ion Striking,"IEEE Electron Device Letters, vol. 41, no. 2, pp. 216-219, Feb. 2020.

联系方式

邮箱:zhouxt18@bjut.edu.cn

电话:010-67391639

地址:北京市朝阳区北京工业大学科学楼1209

学校地址:北京市朝阳区平乐园100号
邮政编码:100124

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