近五年代表性科研论文
1.Effect of uniaxial tensile strains at different orientations on the characteristics of AlGaN/GaN High-Electron-Mobility Transistors, H. Zhu, C. Wang, et al., IEEE Transactions on Electron Devices, 67: 449 (2020); 2. Modulation of the resistive switching of BiFeO3 thin films through electrical stressing, Y. Yang, H. Zhu, et al., Journal of Applied Physics D: Applied Physics, 53: 115301 (2020); 3. A current transient method for trap analysis in resistance switching of BiFeO3 thin films, H. Zhu, Y. Yang, et al., Applied Physics Letters, 112: 182904 (2018); 4. Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs, H. Zhu, X. Meng, et al., Solid State Electronics, 145: 40 (2018); 5. Fatigue behavior of resistive switching in a BiFeO3 thin film, H. Zhu, Y. Yang, et al., Japanese Journal of Applied Physics, 57: 041501, (2018); 6. Effect of poling process on resistive switching in Au/BiFeO3/SrRuO3 structures, H. Zhu, Y. Zhang, et al., Applied Physics Letters 109, 252901 (2016); 7. Investigation of fatigue behavior of Pb(Zr0.45Ti0.55)O3 thin films, H. Zhu, Y. Chen, et al., Japanese Journal of Applied Physics 55, 091501 (2016); 8. The effect of external stress on the electrical characteristics AlGaN/GaN HEMTs, K. Liu, H. Zhu, et al., Microelectronics Reliability 55, 886 (2015); 9. The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes, H. Zhu, K. Liu, et al., Microelectronics Reliability 55, 62 (2015).
