Yusheng Ding,Kunyuan Gao,* Xiangyuan Xiong, Hui Huang, Shengping Wen, Xiaolan Wu, Zuoren Nie,* Rui Shao, Cheng Huang, Shanshan Guo, Dejing Zhou, High corrosion resistance and strain hardening of high Mg Al-alloy with Er and Zr produced by a new reverse stabilization process,Scripta Materialia, 171 (2019), 26-30
Yusheng Ding,Kunyuan Gao*, Hui Huang, Shengping Wen, Xiaolan Wu, Zuoren Nie, Shanshan Guo, Rui Shao, Cheng Huang, Dejing Zhou,Nucleation and evolution of β phase and corresponding intergranular corrosion transition at 100–230 °C in 5083 alloy containing Er and Zr,Materials and Design, 174, 15 (2019), 107778
Yusheng Ding,Kunyuan Gao*, Shanshan Guo, Shengping Wen, Xiaolan Wu, Zuoren Nie, Hui Huang, Dejing Zhou, The recrystallization behavior of Al-6Mg-0.4Mn-0.15Zr-xSc (x = 0.04–0.10 wt%) alloys,Materials Characterization, 147(2019), 262-270,
Yi Zhang,Kunyuan Gao*, Shengping Wen, Hui Huang, Wei Wang, Zhaowei Zhu, Zuoren Nie, Dejing Zhou, The study on the coarsening process and precipitation strengthening of Al3Er precipitate in Al–Er binary alloy,Journal of Alloys and Compounds610 (2014) 27 -34
Yi Zhang,Kunyuan Gao*, Shengping Wen, Hui Huang, Wei Wang, Zhaowei Zhu, Zuoren Nie, Dejing Zhou, Determination of Er and Yb solvuses and trialuminde nucleation in Al-Er and Al-Yb alloys,Journal of Alloys and Compounds, 590 (2014) 526-534
S.P. Wen,K.Y. Gao, H. Huang, Z.R. Nie, Synergetic effect of Er and Zr on the precipitation hardening of Al-Er-Zr alloy,Scripta Materialia, V65(7),(2011) 592-595
K.Y. Gao, F. Speck, K.V. Emtsev, Th. Seyller, L. Ley, Thermal stability of Surface and Interface of atomic layer deposited Al2O3 on H-terminated Silicon,Journal of Applied Physics, 102, 094503 (2007).
K. Y. Gao, T. Seyller, and L. Ley, How the solid state matrix affects the chemical shift of core-level binding energies: A novel method to take the induction effect into account,Solid State Communications, 139(7), 370-375 (2006).
K.Y. Gao, Th. Seyller, L. Ley, F. Ciobanu, G. Pensl, A. Taddich, J.D. Riley, and R. G. C. Leckey, Al2O3prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001),Applied Physics Letters, 83(9), 1830-1832 (2003).