个人基本情况

姓名：孟军华  

职称：校聘教授

所在部门：物理与光电工程学院凝聚态物理研究所

主要研究方向

1. 超宽禁带半导体材料、异质结及其光电器件

2. 钙钛矿材料与光电器件

3. 二维原子晶体材料与器件

教育与工作经历

2019.11-至 今 北京工业大学理学部，副教授/校聘教授

2017.07-2019.11  中科院半导体所，特别研究助理/博士后

2012.09-2017.06 中科院半导体所，材料物理与化学，博士

2008.09-2012.06 中国石油大学（华东），应用物理学，学士

主要科研项目

2022.01-2025.12 国家自然科学基金面上项目，主持

2021.01-2023.12 北京市自然科学基金面上项目，主持

2020.01-2022.12 国家自然科学基金青年项目，主持

2020.01-2024.12 北京工业大学高端人才计划项目，主持

2018.01-2019.12 北京市自然科学基金青年项目，主持

2018.05-2021.04 国家重点研发计划项目子课题，主持

2018.06-2019.11 中国博士后科学基金特别资助项目，主持

2017.11-2019.11 中国博士后科学基金面上项目，主持

代表性成果与荣誉

发表的论文：已发表SCI论文40余篇，授权国家发明专利3项，代表性论文如下：

1. Y. M. Shi, J. H. Meng*, J. R. Chen, R. Wu, L. S. Zhang, J. Jiang, J. X. Deng, Z. G. Yin, X. W. Zhang, Enhanced electrical conductivity and reduced work function of β-Ga₂O₃ thin films by hydrogen plasma treatment, J. Alloys Compd. 97, 4172946 (2024).

2. Y. M. Li, J. H. Meng*, P. Duan, R. Wu, Y. M. Shi, L. S. Zhang, C. X. Yan, J. X. Deng, X. W. Zhang Transport layer engineering by hydrochloric acid for efficient perovskite solar cells with a high open-circuit voltage, ACS Appl. Mater. Interfaces 15 (19), 23208–23216 (2023).

3. G. K. Wang, J. D. Huang, S. Y. Zhang, J. H. Meng*, J. R. Chen, Y. M. Shi, Ji Jiang, J. Z. Li, Yong Chen, L. B. Zeng, Z. G. Yin*, X. W. Zhang*, Wafer-scale single crystal hexagonal boron nitride layers grown by submicron-spacing vapor deposition, Small 2301086 (2023).

4. Y. M.Shi, J. H. Meng*, J. R. Chen, Y. M. Li, R. Wu, J. L. Wu, Z. G. Yin, X. W. Zhang, Epitaxial growth of β-Ga₂O₃ thin films on SrTiO3 (111) and (100) substrates by chemical vapor deposition, Appl. Surf. Sci. 616, 156578 (2023).

5. J. R. Chen, J. H. Meng*, Yong Chen, Y. M.Shi, G. K. Wang, J. D. Huang, S. Y. Zhang, Z. G. Yin, X. W. Zhang*, Band alignment of h-BN/β-Ga₂O₃ heterostructure grown via ion beam sputtering deposition, Appl. Surf. Sci. 604, 154559 (2022).

6. G. K. Wang, J. H. Meng*, J. R. Chen, Yong Chen, J. D. Huang, S. Y. Zhang, Z. G. Yin, Ji Jiang, J. L. Wu, X. W. Zhang*, Epitaxy of hexagonal boron nitride thin films on sapphire for optoelectronics Cryst. Growth Des. 22, 7207−7214 (2022).

7. J. R. Chen, G. K. Wang, J. H. Meng*, Y. Cheng, Z. G. Yin, Y. Tian, J. D. Huang, S. Y. Zhang, J. L. Wu, X. W. Zhang*, Low-temperature direct growth of few-layer hexagonal boron nitride on catalyst-free sapphire substrates, ACS Appl. Mater. Interfaces 14, 7004-7011 (2022).

8. Y. J. Jiao, Q. Jiang, J. H. Meng*, J. L. Zhao, Z. G. Yin, H. L. Gao, J. Zhang, J. X. Deng, X. W. Zhang*, Growth and characteristics of β-Ga₂O₃ thin films on sapphire (0001) by low pressure chemical vapour deposition, Vacuum 189, 110253 (2021).

9. Y. Wang, J. H. Meng^*, Y. Tian, Y. N. Chen, G. K. Wang, Z. G. Yin, P. Jin, J. B. You, J. L. Wu and X. W. Zhang^*, Deep ultraviolet photodetectors based on carbon-doped two-dimensional hexagonal boron nitride, ACS Appl. Mater. Interfaces 12, 27361 (2020).

10. L. K. Cheng, J. H. Meng^*, X. J. Pan, Y. Lu, X. W. Zhang^*, M. L. Gao, Z. G. Yin, D. G. Wang, Y. Wang, J. B. You, J. C. Zhang and E. Q. Xie, Two-dimensional hexagonal boron-carbon-nitrogen atomic layers, Nanoscale 11, 10454 (2019).

11. M. L. Gao, J. H. Meng^*, Y. N. Chen, S. Y. Ye, Y. Wang, C. Y. Ding, Y. B. Li, Z. G. Yin, X. B. Zeng, P. Jin, J. B. You and X. W. Zhang^*, Direct growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors, J. Mater. Chem. C 9, 14999 (2019).

12. D. G. Wang, Y. Lu, J. H. Meng^*, X. W. Zhang^*, Z. G. Yin, M. L. Gao, Y. Wang, L. K. Cheng, J. B. You and J. C. Zhang, Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride, Nanoscale 11, 9310 (2019).

13. J. H. Meng, X. W. Zhang^*, M. L. Gao, B. M. Ming, L. K. Cheng, Z. G. Yin, D. G. Wang, X. X. Li, J. B. You and R. Z. Wang, Controlled growth of unidirectionally aligned hexagonal boron nitride domains on single crystal Ni (111)/MgO thin films, Cryst. Growth Des. 19, 453 (2019).

14. J. H. Meng, X. W. Zhang^*, Y. Wang, Z. G. Yin, H. Liu, J. Xia, H. L. Wang, J. B. You, P. Jin, D. G. Wang and X. M. Meng, Aligned growth of half-millimeter-size hexagonal boron nitride single-crystal domains on epitaxial nickel thin film, Small 13, 1604179 (2017).

15. J. H. Meng, X. Liu, X. W. Zhang^*, Y. Zhang, H. L. Wang, Z. G. Yin, Y. Z. Zhang, H. Liu, J. B. You and H. Yan, Interface engineering for highly efficient graphene-on-silicon Schottky junction solar cells by introducing a h-BN interlayer, Nano Energy 28, 44 (2016).

16. J. H. Meng, X. W. Zhang*, H. Liu, Z. G. Yin, D. G. Wang, J. B. You, and J. L. Wu, Synthesis of atomic layers of hybridized h-BNC by depositing h-BN on graphene via ion beam sputtering, Appl. Phys. Lett. 109, 173106 (2016).

17. J. H. Meng, X. W. Zhang*, H. L. Wang, X. B. Ren, C. H. Jin, Z. G. Yin, X. Liu, and H. Liu, Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition, Nanoscale 7, 16046-16053 (2015).

出版的著作：

1. X. W. Zhang and J. H. Meng, Ultra-wide Bandgap Semiconductor Materials, Chapter 4: Recent progress of boron nitrides (~80 pages), Elsevier (2019).

所获的荣誉：

2019年入选北京工业大学高端人才队伍建设计划—优秀人才

2018年获中国科学院优秀博士学位论文（百篇）

2017年获北京市优秀毕业生

2017年获中国科学院院长优秀奖

联系方式

地址：北京市朝阳区平乐园100号北京工业大学物理与光电工程学院

邮编：100124

办公房间号：数理楼212

E-mail：jhmeng@bjut.edu.cn