代表性论文
1.Jun Deng, Guangdi Shen, Peng Lian, Songyan Liu, Lan Li, Yanli Shi, Junmiao Wu, Nanhui Niu, Deshu Zou，Optoelectronic transport mechanism from subband infrared absorption and tunneling regeneration，Current Applied Physics 2002 2:373-378
2.Deng jun、Wang bin、Han jun、Li jianjun、Shen guangdi，GaAs/AlGaAs Quantum Well Infrared Photodetector with Low Noise，Opto-Electronics Letters, 2005,Vol.1,No.1 37－39
3.Ma Nan,Deng Jun, Li Dingyuan, Shi Yanli, Shen Guangdi. Accessing the epitaxy structure of quantum well infrared photodetectors by photoluminescence measurement. International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications. Proceedings of the SPIE. 2009, 7383:738332-738332-8
4.Dingyuan Li,Jun Deng, Nan Ma, et al,Analysis of carriers transport of novel GaAs/AlGaAs quantum well infrared Photodetectors, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications. Proceedings of the SPIE. 2009, 7383:738310-738310-8
5.Shaojun Luo，Jun Deng，Jianjun Li，Linchun Gao，Rui Chen，Jun Han，The influence of the growth temperature on the doping characteristics of P-GaP layers in AlGaInP red LED，Proceedings 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics (AOM 2010)
6.Lin-chun Gao，Jun Deng，Shao-jun Luo，Rui Chen1，Jian-jun Li，Jun Han，Study of P type doping in AlGaInP cladding layer of high brightness red LED，Proceedings 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics (AOM 2010)
7.YANG Li-peng,DENG Jun*, SHI Yan-li, CHEN Yong-yuan, WU Bo，Fabrication and performance of InAs/GaSb type-II superlattices Mid-wavelength infrared detectors，Proc.of SPIE Vol. 8907, 890741，International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications
