基本信息

北京工业大学材料与制造学部教授、博士生导师，新能源材料与技术研究所所长，获得了北京市科技新星、北京市青年拔尖人才及北京工业大学京华人才等人才计划称号。美国麻省理工学院访问学者、日本产业综合技术研究所特别研究员、香港中文大学研究助理及香港城市大学访问研究员等多家国际知名院所的留学访问经历。在新能源材料与技术、纳米半导体光电功能材料与器件及智能传感材料与器件技术等研究领域上取得了一系列具有良好科学意义与应用价值的科研成果。所培养的1名博士曾获北京市优秀博士论文及全国优秀博士论文提名奖。已在EES、AM、JACS、AFM、CM、JMCA、PRB、APL等国际知名学术刊物上发表SCI收录论文150多篇。以第一或通讯作者发表的SCI收录一、二区论文70余篇，出版专著&教材两部。申请国家发明专利100余项，其中第一发明人国家授权发明专利24项。主持了JKW基础加强计划重点基础研究项目课题、5项国家自然科学基金、GF基础科研计划、北京市科技新星计划及北京市自然科学基金等科研项目10余项,作为子课题负责人或骨干参与国家重大专项、国家重点研发计划、国家自然科学基金重点基金等科研项目多项。由于在本研究领域的影响力，被邀担任了国家高层次人才计划评审专家、国家重点研发计划等国家及各类省部级的重要项目的会议评审专家、国际学术期刊Open Physics Journal、Appl.Sci的编委、中国材料研究会计算材料分会委员及JACS、AFM、Small、JMCA等多家国际权威学术期刊专家审稿人。

主要研究方向

1）新能源材料设计、制备与器件应用

2）新型半导体光电功能材料的设计、制备与器件应用

3）智能传感设计、制备及器件应用。

联系方式

E-mail:

联系电话：（010）67392445 (office)

专著&教材出版

1. 王如志、严辉纳米半导体场发射冷阴极理论与实验，科学出版社（2017.1）

2. 王如志、刘维、刘立英半导体材料，清华大学出版社（2019.12）

第一或通讯作者代表学术论文

1. Surface state effect on gas sensitivity in nano-hierarchical tin oxide,Ceram. Int.46, 26871 (2020).

2. Nanosheet/W18O49 Nanowire Composites for NO2 Sensing,Acs Appl. Nano Mater.s3, 5473 (2020).

3. Local spring effect in titanium-based layered oxides,Energy Environ. Sci.13, 4371 (2020).

4. Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment,J. Phys. Chem. C124, 6725 (2020).

5. Wrinkled-Surface-Induced Memristive Behavior of MoS(2)Wrapped GaN Nanowires,Adv. Electron. Mater., 2000571 (2020).

6. Photoluminescence Properties of GaN Nanowires Grown in a Gradient-Plasma Environment,J. Phys. Chem. C124, 16002 (2020).

7. Metallic two-dimensional C3N allotropes with electron and ion channels for high-performance Li-ion battery anode materials,Appl. Surf. Sci. 518, 146254 (2020).

8. Coupling enhanced growth by nitrogen and hydrogen plasma of carbon nanotubes,Crystengcomm21, 4653 (2019).

9. Enhancement mechanism of H2 sensing in metal-functionalized GaN nanowires,Appl. Surf. Sci.486, 212 (2019).

10. C3N/phosphorene heterostructure: a promising anode material in lithium-ion batteries,J. Mater. Chem. A7, 2106 (2019).

11. Trap effects on vacancy defect of C3N as anode material in Li-ion battery,Appl. Surf. Sci.475, 102 (2019).

12. Direct Growth of GaN Nanowires by Ga and N2 without Catalysis,Crystal Growth & Design19, 2687 (2019).

13. Oxygen vacancy effect on photoluminescence of KNb3O8 nanosheets,Appl. Surf. Sci.439, 983 (2018).

14. Assembled graphene nanotubes decorated by hierarchical MoS 2 structures: Enhanced lithium storage and in situ TEM lithiation study,Energy Storage Materials9, 188 (2017).

15. Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition,J. Phys. Chem. C121, 24804 (2017).

16. Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes.Sci Rep7, 43625, 43625 (2017).

17. Ultra-Low Threshold Field Emission from Amorphous Bn Nanofilms.J. Alloy. Compd.J. Alloy. Compd.705, 734 (2017).

18. Elastic Properties, Defect Thermodynamics, Electrochemical Window, Phase Stability, and Li+ Mobility of Li3PS4: Insights from First-Principles Calculations.Acs Applied Materials & Interfaces8, 25229 (2016).

19. Engineering of hydrogenated two-dimensional h-BN/C superlattices as electrostatic substrates.Phys. Chem. Chem. Phys.18, 974 (2016).

20. An atomistic mechanism study of GaN step-flow growth in vicinal m-plane orientations.Phys. Chem. Chem. Phys.18, 29239 (2016).

21. A low cost, green method to synthesize GaN nanowires.Sci Rep5, 17692 (2015).

22. Bipolar doping of double-layer graphene vertical heterostructures with hydrogenated boron nitride.Phys. Chem. Chem. Phys.17, 11692 (2015).

23. Self-templating noncatalyzed synthesis of monolithic boron nitride nanowires.RSC Adv.5, 75810 (2015).

24. Two dimensional Dirac carbon allotropes from graphene,Nanoscale6 (2), 1113 (2014).

25. Si Doping at GaN Inversion Domain Boundaries: an Interfacial Polar Field for Electrons and Holes Separation.J. Mater Chem. A, 2, 9744（2014）.

26. Crystallization Effects of NanocrystallineGaN Films on Field Emission.J. Phys. Chem. C117, 1518-1523 (2013).

27. 1From powder to nanowire: a simple and environmentally friendly strategy for optical and electrical GaN nanowire films.Crystengcomm15, 1626-1634 (2013).

28. Wurtzite-type CuInSe2 for high-performance solar cell absorber: ab initio exploration of the new phase structure.J. Mater. Chem.22, 21662-21666 (2012)

29. Giant magnetoresistance effect in graphene with asymmetrical magnetic superlattices.Appl. Phys. Lett.101, 152404 (2012).

30. Order Structures of AlxGa1-xN Alloys: First-Principles Predictions.J. Phys. Chem. C116, 1282-1285 (2012).

31. Enhanced Field Emission from GaN and AlN Mixed-Phase Nanostructured FilmJ. Phys. Chem. C116 (2), 1780-1783 (2012).

32. Electron field emission enhanced by geometric and quantum effects from nanostructured AlGaN/GaN quantum wells.Appl. Phys. Lett.98, 152110 (2011).

33. Strain-induced negative differential resistance in armchair-edge graphenenanoribbons.Appl. Phys. Lett.98, 082108 (2011).

34. Field Emission Enhancement in Semiconductor Nanofilms by Engineering the Layer Thickness: First-Principles Calculations.J. Phys. Chem. C114, 11584-11587 (2010).

35. Ultra-Low-Threshold Field Emission from Oriented Nanostructured GaN Films on Si Substrate.Appl. Phys. Lett.96(9), 092101(2010).

36. Field emission enhancement by the quantum structure in an ultrathin multilayer planar cold cathode.Appl. Phys. Lett.92(14), 142102 (3) (2008)

37. Spin transport in an asymmetrical magnetic superlattice.Phys. Rev. B74(2), 024417 (5) (2006).

38. Strain-induced Raman-mode shift in single-wall carbon nanotubes: Calculation of force constants from molecular-dynamics simulations.Phys. Rev. B77(19), 195440 (5) (2008).

39. Anomalous pressure behavior of tangential modes in single-wall carbon nanotubes.Phys. Rev. B.76（3）, 033402 (4) (2007).

40. Pressure-induced Raman-active radial breathing mode transition in single-wall carbon nanotubes.Phys. Rev. B2007, 75(4), 045425 (5) (2007).

41. Structural enhancement mechanism of field emission from multilayer semiconductor films.Phys. Rev. B, 72(12), 125310 (6) ( 2005).

42. Multipeak characteristics of field emission energy distribution from semiconductors.Phys. Rev. B,70（19），195305 (6) (2004)

43. Band Bending Mechanism for Field Emission in Wide Band Gap Semiconductors.Appl. Phys. Lett.,81(15), 2782～2784 (2002).