周新田  

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一、基本情况

周新田,男,工学博士,研究生导师

主要从事功率半导体器件相关方向的研究工作,在国际顶级期刊TPEEDLTED等上发表多篇研究成果,获得中国博士后、北京市博士后、北京市朝阳区博士后科学基金资助。

 

二、教育经历

2018.07-至今 北京工业大学 博士后、讲师

2014.09-2018.07 清华大学 微纳电子系 博士

2011.09-2014.07 北京工业大学 微电子专业 硕士

2007.09-2011.07 河北工业大学 电子科学与技术专业 学士

 

三、研究方向

1、一代、三代功率半导体器件的设计、研发及制造

2、抗辐照加固的功率半导体器件研发

3、宽禁带功率半导体器件的可靠性研究

4、功率半导体器件的解析建模

 

四、主要研究成果

[1] X. Zhou, H. Pang, Y. Jia*, D. Hu, Y. Wu, Y. Tang, T. Xia, H. Gong, and Y. Zhao, "SiC Double-Trench MOSFETs With Embedded MOS-Channel Diode," IEEE Transactions on Electron Devices, vol. 67, no. 2, pp. 582-587, Feb. 2020.

[2] X. Zhou, H. Gong, Y. Jia*, D. Hu, Y. Wu, T. Xia, H. Pang, and Y. Zhao, "SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance," IEEE Journal of the Electron Devices Society, vol. 8, pp. 619-625, 2020.

[3] X. Li, Y. Jia, X. Zhou*, Y. Zhao, Y. Tang, G. Li, and G. Jia, "Degradation of Radiation-Hardened Vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor During Gamma Ray Irradiation Performed After Heavy Ion Striking," IEEE Electron Device Letters, vol. 41, no. 2, pp. 216-219, Feb. 2020.

[4] X. Zhou, Y. Jia*, D. Hu, and Y. Wu, "A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility," IEEE Transactions on Electron Devices, vol. 66, no. 6, pp. 2551-2556, June 2019.

[5] X. Zhou, Y. Tang, Y. Jia*, D. Hu, Y. Wu, T. Xia, H. Gong, and H. Pang, "Single-Event Effects in SiC Double-Trench MOSFETs," IEEE Transactions on Nuclear Science, vol. 66, no. 11, pp. 2312-2318, Nov. 2019.

[6] X. Zhou, H. Su, R. Yue, G. Dai, J. Li, Y. Wang*, and Z. Yu, "A Deep Insight Into the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Unclamped Inductive Switching Stresses," IEEE Transactions on Power Electronics, vol. 33, no. 6, pp. 5251-5261, June 2018.

[7] X. Zhou, R. Yue, J. Zhang, G. Dai, J. Li, and Y. Wang*, "4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure," IEEE Transactions on Electron Devices, vol. 64, no. 11, pp. 4568-4574, Nov. 2017.

[8] X. Zhou*, H. Su, Y. Wang, R. Yue, G. Dai and J. Li, "Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests," IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4346-4351, Nov. 2016.

[9] X. Zhou, Y. Wang*, R. Yue, G. Dai, and J. Li, "Physics-based spice model on the dynamic characteristics of silicon carbide Schottky barrier diode," IET Power Electronics, vol. 9, no. 15, pp. 2803-2807, 14(12), 2016.

 

五、联系方式

邮箱:zhouxt18@bjut.edu.cn

电话:010-67391639

地址:北京市朝阳区北京工业大学科学楼1209


北京工业大学研究生招生办公室 地址:北京市朝阳区平乐园100号 邮政编码:100124 联系电话:010-67392533