李炜  

李炜2.png

李炜,副教授,硕士生导师,北京特聘专家(2019)。201711月获得谢菲尔德大学(The university of Sheffield)应用物理学博士学位。2017年初至2018年在伦敦大学学院(University College London)电子工程系做访问学者。20189月加入北京工业大学固体微结构与性能研究所。到目前,共计发表学术论文30余篇,其中包括自然子刊Nat. PhotonicsOpticaAPLJAP等,被引用500余次。

研究方向:

1.III-V半导体材料电子显微学表征及器件制造

2.球差校正透射电子显微镜的应用和发展

3.半导体材料的结构与物性

 

主要发表文章:

1.      Chen, S., Li, W., Zhang, Z., Childs, D., Zhou, K., Orchard, J., Kennedy, K., Hugues, M., Clarke, E., Ross, I. and Wada, O. (2015). GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures. Nanoscale Research letters, 10(1), 340.

2.      Chen, S., Li, W., Wu, J., Jiang, Q., Tang, M., Shutts, S., Elliott, S.N., Sobiesierski, A., Seeds, A.J., Ross, I., Smowton, P. M. and Liu, H. (2016). Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics,10, 307-311. (IF: 37.85)

3.      Li, W., Chen, S., Tang, M., Wu, J., Hogg, R., Seeds, A., Liu, H, Ross, I. (2017). Effect of rapid thermal annealing on threading dislocation density in GaAs monolithically grown on Si. Journal of Applied Physics, 123, 215303.

4.      Butler, I., Li, W., Ross, I., Nishi, K., Takemasa, K., Sugawara, M., Sobhani, S., Banazadeh, N., Childs, D., and Hogg, R. (2018). Size anisotropy inhomogeneity effects in state-of-art quantum dot lasers. Applied Physics letters, 113, 012105.

5.      Wang, Y., Chen, S., Yu, Y., Zhou, L., Liu, L., Yang, C., Liao, M., Tang, M., Liu, Z. Wu, J., Li, W., Ross, I., Seeds, A. J., Liu, H. and Yu S. (2018). Monolithic quantum-dot distributed feedback laser array on silicon. Optica, 5(5), 528. (IF: 7.78)

6.      Li, W., Chen, S., Wu, J., Li, A., Tang, M., Yang, L., Chen, Y., Seeds, A., Liu, H, Ross, I. (2019) The effect of post-growth rapid thermal annealing on InAs/InGaAs dot-in-a-well structure monolithically grown on Si. Journal of Applied Physics, 123, 135301.

7.      Liao, M.*, Li, W.*, Tang, M., Li, A., Chen S., Seeds, A., and Liu, H. (2019) Selective area intermixing of III–V quantumdot lasers grown on silicon with two wavelength lasing emissions. Semicond. Sci. Technol. 34, 085004.

8.      Lu. Y., Cao. V., Liao. M., Li. W., Tang. M., Li. A., Smowton. P., Seeds. A., Liu. H., Chen. S. (2020) Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon. Opt Lett. 45(19):5468-5471.

9.      Hui, F., Li, C., Chen, Y. Wang, C., Huang, J., Li, A., Li, W., Zou, J. & Han. X. (2020) Understanding the structural evolution of Au/WO2.7 compounds in hydrogen atmosphere by atomic scale in situ environmental TEM. Nano Res. 13, 3019–3024.

10.  Yang, L., Li, S., Fan, K., Li, Y., Chen, Y., Li, W., Kong, D., Cao, P., Long, H., Li, A. (2021)Twin crystal structured Al-10 wt.% Mg alloy over broad velocity conditions achieved by high thermal gradient directional solidification, Journal of Materials Science & Technology, Volume 71, 152-162.

 

更新信息请参考:https://www.researchgate.net/profile/Wei-Li-189

联系方式: liwei88@bjut.edu.cn


北京工业大学研究生招生办公室 地址:北京市朝阳区平乐园100号 邮政编码:100124 联系电话:010-67392533